4
RF Device Data
Freescale Semiconductor
MRF7S16150HR3 MRF7S16150HSR3
Figure 1. MRF7S16150HR3(HSR3) Test Circuit Schematic
Z7 0.619″
x 1.330
Microstrip
Z8 0.284″
x 0.190
Microstrip
Z9 0.220″
x 0.250
Microstrip
Z10 0.531″
x 0.084
Microstrip
PCB Arlon CuClad 250GX-0300-55-22, 0.030″, εr
= 2.55
Z1, Z5, Z11 0.744″
x 0.084
Microstrip
Z2 0.822″
x 0.084
Microstrip
Z3 0.252″
x 1.240
Microstrip
Z4 0.402″
x 1.240
Microstrip
Z6 0.111″
x 1.330
Microstrip
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
C2
C3
C6
C7
C8
R1
Z1
Z2
Z3
Z4
C4
Z7
C10
Z6
Z5
Z9
Z10
Z11
Z8
+
C1
R2
B1
+
C9
C5
++
Table 5. MRF7S16150HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Small Ferrite Bead
2743019447
Fair Rite
C1
10 μF, 35 V Electrolytic Capacitor
EMVY350ADA100ME55G
Nippon Chemi-Con
C2, C8
0.01 μF, 50 V Chip Capacitors
C1825C103J5RAC
Kemit
C3, C5
10 pF Chip Capacitors
ATC100B100BT500XT
ATC
C4, C10
47 pF Chip Capacitors
ATC100B470BT500XT
ATC
C6, C7
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C9
220 μF, 50 V Electrolytic Capacitor
EMVY500ADA221MJ0G
Nippon Chemi-Con
R1
1 KΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 Ω, 1/4 W Chip Resistor
CRCW120610R1FKEA
Vishay
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相关代理商/技术参数
MRF7S18125AHR3 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S18125AHR5 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S18125AHSR 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述:
MRF7S18125AHSR3 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S18125AHSR5 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S18125BHR3 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S18125BHR5 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S18125BHSR3 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray